Er-doped amorphous and crystalline Al2O3 and La2O3 films grown with low energy ions from an ECR plasma

J. C. Barbour, B. G. Potter, D. M. Follstaedt, J. A. Knapp, M. B. Sinclair

Research output: Contribution to journalConference articlepeer-review


The effects of low energy ions from a biased electron cyclotron resonance plasma during growth of Al2O3 and La2O3 are used to modify the density and crystalline quality of these oxide films. The type of phase formed for Al2O3 is varied with the ion-assisted growth from amorphous to crystalline γ-Al2O3. The photoluminescence (PL) properties of different Er-doped Al- and La-oxide phases are examined, and through comparison of the PL spectra, the local environment of Er in these oxide materials is discussed.

Original languageEnglish (US)
Pages (from-to)465-470
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 4 1996Dec 5 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Er-doped amorphous and crystalline Al<sub>2</sub>O<sub>3</sub> and La<sub>2</sub>O<sub>3</sub> films grown with low energy ions from an ECR plasma'. Together they form a unique fingerprint.

Cite this