Er-doped fluoride glass films by MOCVD for waveguide devices

Chia Yen Li, Vladimir Fuflyigin, Jing Zhao, Xuesheng Chen, Seppo Honkanen, Nasser Peyghambarian

Research output: Contribution to journalConference article

Abstract

We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.

Original languageEnglish (US)
Pages (from-to)68-73
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2996
DOIs
StatePublished - 1997
EventRare-Earth-Doped Devices - San Jose, CA, United States
Duration: Feb 10 1997Feb 10 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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