Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Eric K. Lindmark, John P. Prineas, Galina Khitrova, Hyatt M. Gibbs, Oleg B. Gusev, Boris J. Ber, Mikhail S. Bresler, Irina N. Yassievich, B. P. Zakharchenya, V. F. Masterov

Research output: Contribution to journalConference articlepeer-review

Abstract

Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.

Original languageEnglish (US)
Pages (from-to)2-7
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2996
DOIs
StatePublished - 1997
Externally publishedYes
EventRare-Earth-Doped Devices - San Jose, CA, United States
Duration: Feb 10 1997Feb 10 1997

Keywords

  • AlGaAs
  • Diffusion
  • Er
  • Erbium doping
  • GaAs
  • Interdiffusion
  • Photoluminescence
  • Quantum wells
  • SIMS
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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