Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

O. B. Gusev, B. Ya Ber, M. S. Bresler, B. P. Zakharchenya, I. N. Yassievich, Galina Khitrova, H. M. Gibbs, D. P. Prineas, E. K. Lindmark, V. F. Masterov

Research output: Contribution to journalArticle

Abstract

Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the course of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanced vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorporating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters.

Original languageEnglish (US)
Pages (from-to)484-488
Number of pages5
JournalPhysics of the Solid State
Volume41
Issue number3
StatePublished - Mar 1999

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Erbium
Gallium
Aluminum
erbium
Semiconductor quantum wells
gallium
aluminum gallium arsenides
quantum wells
aluminum
Vacancies
Molecular beam epitaxy
Cations
Positive ions
gallium arsenide
cations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Gusev, O. B., Ber, B. Y., Bresler, M. S., Zakharchenya, B. P., Yassievich, I. N., Khitrova, G., ... Masterov, V. F. (1999). Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures. Physics of the Solid State, 41(3), 484-488.

Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures. / Gusev, O. B.; Ber, B. Ya; Bresler, M. S.; Zakharchenya, B. P.; Yassievich, I. N.; Khitrova, Galina; Gibbs, H. M.; Prineas, D. P.; Lindmark, E. K.; Masterov, V. F.

In: Physics of the Solid State, Vol. 41, No. 3, 03.1999, p. 484-488.

Research output: Contribution to journalArticle

Gusev, OB, Ber, BY, Bresler, MS, Zakharchenya, BP, Yassievich, IN, Khitrova, G, Gibbs, HM, Prineas, DP, Lindmark, EK & Masterov, VF 1999, 'Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures', Physics of the Solid State, vol. 41, no. 3, pp. 484-488.
Gusev OB, Ber BY, Bresler MS, Zakharchenya BP, Yassievich IN, Khitrova G et al. Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures. Physics of the Solid State. 1999 Mar;41(3):484-488.
Gusev, O. B. ; Ber, B. Ya ; Bresler, M. S. ; Zakharchenya, B. P. ; Yassievich, I. N. ; Khitrova, Galina ; Gibbs, H. M. ; Prineas, D. P. ; Lindmark, E. K. ; Masterov, V. F. / Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures. In: Physics of the Solid State. 1999 ; Vol. 41, No. 3. pp. 484-488.
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