Estimating the effective pressure on patterned wafers during STI CMP

J. Sorooshian, L. Borucki, R. Timon, D. Stein, D. Boning, D. Hetherington, Ara Philipossian

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Removal rate results obtained from a 150 mm Speedfam-IPEC 472 polisher, coupled with a proven removal rate model has allowed for the determination of effective pressure (i.e., the actual pressure exerted on the structures of a patterned wafer) during chemical mechanical penalization (CMP) of high-density plasma-filled shallow trench isolation (STI) wafers. Results showed that the ratio of derived effective pressure to applied wafer pressure was 2.2, 1.7, and 1.3 for 10, 50, and 90% density wafers, respectively. The relative consistency of these ratios indicates that the effective pressure experienced during polishing is not impacted by pattern density in a proportionate manner.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume7
Issue number10
DOIs
StatePublished - 2004

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isolation
estimating
wafers
Plasma density
Polishing
polishing
plasma density

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Estimating the effective pressure on patterned wafers during STI CMP. / Sorooshian, J.; Borucki, L.; Timon, R.; Stein, D.; Boning, D.; Hetherington, D.; Philipossian, Ara.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 10, 2004.

Research output: Contribution to journalArticle

Sorooshian, J. ; Borucki, L. ; Timon, R. ; Stein, D. ; Boning, D. ; Hetherington, D. ; Philipossian, Ara. / Estimating the effective pressure on patterned wafers during STI CMP. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 10.
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