Estimating the effective pressure on patterned wafers during STI CMP

J. Sorooshian, L. Borucki, R. Timon, D. Stein, D. Boning, D. Hetherington, A. Philipossian

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Removal rate results obtained from a 150 mm Speedfam-IPEC 472 polisher, coupled with a proven removal rate model has allowed for the determination of effective pressure (i.e., the actual pressure exerted on the structures of a patterned wafer) during chemical mechanical penalization (CMP) of high-density plasma-filled shallow trench isolation (STI) wafers. Results showed that the ratio of derived effective pressure to applied wafer pressure was 2.2, 1.7, and 1.3 for 10, 50, and 90% density wafers, respectively. The relative consistency of these ratios indicates that the effective pressure experienced during polishing is not impacted by pattern density in a proportionate manner.

Original languageEnglish (US)
Pages (from-to)G204-G206
JournalElectrochemical and Solid-State Letters
Volume7
Issue number10
DOIs
StatePublished - Nov 22 2004

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Sorooshian, J., Borucki, L., Timon, R., Stein, D., Boning, D., Hetherington, D., & Philipossian, A. (2004). Estimating the effective pressure on patterned wafers during STI CMP. Electrochemical and Solid-State Letters, 7(10), G204-G206. https://doi.org/10.1149/1.1785933