The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)