Etching of silicon dioxide with gas phase hf and water: Initiation, bulk etching, and termination

Gerardo Montaño-Miranda, Anthony Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Semiconductor Surfaces VIII
EditorsPaul Mertens, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages3-6
Number of pages4
ISBN (Print)9783908451464
DOIs
StatePublished - Jan 1 2008
Event8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2006 - Antwerp, Belgium
Duration: Sep 18 2006Sep 20 2006

Publication series

NameSolid State Phenomena
Volume134
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Other

Other8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2006
CountryBelgium
CityAntwerp
Period9/18/069/20/06

Keywords

  • Gas phase etching
  • HF
  • Surface characterization
  • Surface preparation
  • Water

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Montaño-Miranda, G., & Muscat, A. (2008). Etching of silicon dioxide with gas phase hf and water: Initiation, bulk etching, and termination. In P. Mertens, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces VIII (pp. 3-6). (Solid State Phenomena; Vol. 134). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.134.3