Etching of silicon dioxide with gas phase HF and water: Initiation, bulk etching, and termination

Gerardo Montaño-Miranda; Anthony Muscat

doi:10.4028/3-908451-46-9.3

Etching of silicon dioxide with gas phase HF and water: Initiation, bulk etching, and termination

Gerardo Montaño-Miranda, Anthony Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS 2006 - Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS)
Publisher	Trans Tech Publications Ltd
Pages	3-6
Number of pages	4
ISBN (Print)	3908451469, 9783908451464
DOIs	https://doi.org/10.4028/3-908451-46-9.3
State	Published - 2008
Event	8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2006 - Antwerp, Belgium Duration: Sep 18 2006 → Sep 20 2006

Publication series

Name	Solid State Phenomena
Volume	134
ISSN (Print)	1012-0394

Other

Other	8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2006
Country/Territory	Belgium
City	Antwerp
Period	9/18/06 → 9/20/06

Keywords

Gas phase etching
HF
Surface characterization
Surface preparation
Water

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/3-908451-46-9.3

Cite this

Montaño-Miranda, G., & Muscat, A. (2008). Etching of silicon dioxide with gas phase HF and water: Initiation, bulk etching, and termination. In Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS 2006 - Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) (pp. 3-6). (Solid State Phenomena; Vol. 134). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-46-9.3

Etching of silicon dioxide with gas phase HF and water : Initiation, bulk etching, and termination. / Montaño-Miranda, Gerardo; Muscat, Anthony.

Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS 2006 - Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS). Trans Tech Publications Ltd, 2008. p. 3-6 (Solid State Phenomena; Vol. 134).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Montaño-Miranda, G & Muscat, A 2008, Etching of silicon dioxide with gas phase HF and water: Initiation, bulk etching, and termination. in Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS 2006 - Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS). Solid State Phenomena, vol. 134, Trans Tech Publications Ltd, pp. 3-6, 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2006, Antwerp, Belgium, 9/18/06. https://doi.org/10.4028/3-908451-46-9.3

Montaño-Miranda G, Muscat A. Etching of silicon dioxide with gas phase HF and water: Initiation, bulk etching, and termination. In Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS 2006 - Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS). Trans Tech Publications Ltd. 2008. p. 3-6. (Solid State Phenomena). https://doi.org/10.4028/3-908451-46-9.3

Montaño-Miranda, Gerardo ; Muscat, Anthony. / Etching of silicon dioxide with gas phase HF and water : Initiation, bulk etching, and termination. Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS 2006 - Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS). Trans Tech Publications Ltd, 2008. pp. 3-6 (Solid State Phenomena).

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Etching of silicon dioxide with gas phase HF and water: Initiation, bulk etching, and termination

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Keywords

ASJC Scopus subject areas

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