Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques

Barrett G Potter, D. Dimos, M. B. Sinclair, S. Lockwood

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Reflection ellipsometry and computational modeling are used to examine electro-optic (EO) effects in a PZT (30/70) thin film. The combined influences of thin film etalon effects, the optical configuration used to measure electro-optic changes in the PZT/electrode thin film stack, and incoherent scattering within the layer structure are found to significantly influence the corresponding intensity modulation under an ac field. The impact of these findings on design considerations for EO-based devices and the use of photometric ellipsometry to characterize these materials is discussed.

Original languageEnglish (US)
Pages (from-to)59-68
Number of pages10
JournalIntegrated Ferroelectrics
Volume11
Issue number1-4
DOIs
StatePublished - 1995
Externally publishedYes

Fingerprint

Ferroelectric thin films
Electrooptical effects
electro-optics
Ellipsometry
Thin films
ellipsometry
evaluation
thin films
Incoherent scattering
incoherent scattering
Modulation
modulation
Electrodes
electrodes
configurations

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials

Cite this

Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques. / Potter, Barrett G; Dimos, D.; Sinclair, M. B.; Lockwood, S.

In: Integrated Ferroelectrics, Vol. 11, No. 1-4, 1995, p. 59-68.

Research output: Contribution to journalArticle

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