Summary form only given. The optical Stark shift in semiconductors transient nonlinearity which helps to understand fundamental ultrafast microscopic processes. Studies of similarities and differences between optical Stark shifts in atomic two-level systems and those observed in semiconductors led to the understanding of semiconductor-specific many-body effects such as biexcitons and Coulomb memory effects. While the two-level analogies of Stark shifts in semiconductors have been successfully exploited, the question of what one can learn from a comparison of coherent atomic three-level effects with optical Stark shifts in semiconductors using the coherent coupling between heavy-hole (hh) and light-hole (lh) excitons has not been addressed so far. In atomic three-level systems, nonradiative or Raman coherences are the foundation of important nonlinear optical effects such as electromagnetically-induced transparency and lasing without inversion. We investigate these coherences in an InGaAs multiple quantum well utilizing coherently-coupled Stark shift measurements of the hh- and lh-exciton resonances.