EVIDENCE THAT ROOM TEMPERATURE OPTICAL BISTABILITY IS EXCITONIC IN BOTH BULK AND MULTIPLE-QUANTUM-WELL GALLIUM ARSENIDE.

S. Ovadia, H. M. Gibbs, J. L. Jewell, D. Sarid, Nasser N Peyghambarian

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The minimum power ( approximately equals 5 mw) for room-temperature optical bistability is very similar in bulk and multiple-quantum-well (MQW) etalons. No exciton resonance is obvious in the absorption spectrum of bulk GaAs at 300 K because it blends into the band edge, but it is present, and its area is two-thirds that of the MQW heavy-hole exciton. It is shown that the excitonic nonlinear index change is consistent with the observed bistability.

Original languageEnglish (US)
Pages (from-to)565-568
Number of pages4
JournalOptical Engineering
Volume24
Issue number4
StatePublished - Jul 1985

Fingerprint

Optical bistability
optical bistability
Gallium arsenide
Excitons
Semiconductor quantum wells
gallium
Etalons
excitons
quantum wells
etalons
room temperature
Absorption spectra
absorption spectra
Temperature

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

EVIDENCE THAT ROOM TEMPERATURE OPTICAL BISTABILITY IS EXCITONIC IN BOTH BULK AND MULTIPLE-QUANTUM-WELL GALLIUM ARSENIDE. / Ovadia, S.; Gibbs, H. M.; Jewell, J. L.; Sarid, D.; Peyghambarian, Nasser N.

In: Optical Engineering, Vol. 24, No. 4, 07.1985, p. 565-568.

Research output: Contribution to journalArticle

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