Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV

B. Johnson, Jun Sik Jeoung, P. Anderson, Supapan Seraphin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The microstructural changes that occur during annealing of ultra-thin oxygen-implanted silicon-on-insulator have been studied using transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). Silicon substrates were implanted at 65 kev with a dose of 4.5 × 1017 O+ cm-2, followed by annealing at various temperatures. TEM results show that the defects observed in the as-implanted material (stacking faults and {1 1 3} defects) were reduced after annealing at 900 °C for 2 h and were eliminated after annealing at 1100°C for 2 h. A continuous buried oxide (BOX) layer was formed after annealing at 1300°C for 6h. Numerous silicon islands were present in the BOX layer. The silicon islands can be traced to a precursor structure that developed at the implantation step. RBS results indicate that the crystallinity of the top Si layer is significantly restored after annealing at 1100 °C for 2 h and is completely restored after annealing at 1300°C for 6 h. It was also found through AES analysis that the redistribution of oxygen during annealing is initiated at 1100°C.

Original languageEnglish (US)
Pages (from-to)303-308
Number of pages6
JournalJournal of Materials Science: Materials in Medicine
Volume13
Issue number5
DOIs
StatePublished - May 2002

Fingerprint

Silicon
Spectrum Analysis
wafers
Annealing
dosage
microstructure
Microstructure
annealing
Transmission Electron Microscopy
Islands
Oxides
Electrons
Oxygen
Rutherford backscattering spectroscopy
silicon
Auger electron spectroscopy
Spectrometry
Auger spectroscopy
electron spectroscopy
backscattering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV. / Johnson, B.; Jeoung, Jun Sik; Anderson, P.; Seraphin, Supapan.

In: Journal of Materials Science: Materials in Medicine, Vol. 13, No. 5, 05.2002, p. 303-308.

Research output: Contribution to journalArticle

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