Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV

B. Johnson, Jun Sik Jeoung, P. Anderson, Supapan Seraphin

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The microstructural changes that occur during annealing of ultra-thin oxygen-implanted silicon-on-insulator have been studied using transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). Silicon substrates were implanted at 65 kev with a dose of 4.5 × 1017 O+ cm-2, followed by annealing at various temperatures. TEM results show that the defects observed in the as-implanted material (stacking faults and {1 1 3} defects) were reduced after annealing at 900 °C for 2 h and were eliminated after annealing at 1100°C for 2 h. A continuous buried oxide (BOX) layer was formed after annealing at 1300°C for 6h. Numerous silicon islands were present in the BOX layer. The silicon islands can be traced to a precursor structure that developed at the implantation step. RBS results indicate that the crystallinity of the top Si layer is significantly restored after annealing at 1100 °C for 2 h and is completely restored after annealing at 1300°C for 6 h. It was also found through AES analysis that the redistribution of oxygen during annealing is initiated at 1100°C.

Original languageEnglish (US)
Pages (from-to)303-308
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume13
Issue number5
DOIs
StatePublished - May 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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