Evolution of the electronic band structure of twisted bilayer graphene upon doping

Shengqiang Huang, Matthew Yankowitz, Kanokporn Chattrakun, Arvinder Sandhu, Brian J. Leroy

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with doping.

Original languageEnglish (US)
Article number7611
JournalScientific reports
Volume7
Issue number1
DOIs
StatePublished - Dec 1 2017

ASJC Scopus subject areas

  • General

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