Excitation and de-excitation of erbium ions in semiconductor matrices

I. N. Yassievich, M. S. Bresler, O. B. Gusev, G. Khitrova

Research output: Contribution to journalArticle

Abstract

We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.

Original languageEnglish (US)
Pages (from-to)1595-1600
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue number9993
StatePublished - Dec 1 1997

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Keywords

  • Erbium ions
  • Excitation of photoluminescence
  • Semiconductor matrices

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yassievich, I. N., Bresler, M. S., Gusev, O. B., & Khitrova, G. (1997). Excitation and de-excitation of erbium ions in semiconductor matrices. Materials Science Forum, 258-263(9993), 1595-1600.