Excitation and de-excitation of erbium ions in semiconductor matrices

I. N. Yassievich, M. S. Bresler, O. B. Gusev, G. Khitrova

Research output: Contribution to journalArticlepeer-review

Abstract

We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.

Original languageEnglish (US)
Pages (from-to)1595-1600
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue number9993
DOIs
StatePublished - Jan 1 1997

Keywords

  • Erbium ions
  • Excitation of photoluminescence
  • Semiconductor matrices

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Excitation and de-excitation of erbium ions in semiconductor matrices'. Together they form a unique fingerprint.

Cite this