Excitation and de-excitation of erbium ions in semiconductor matrices

I. N. Yassievich, M. S. Bresler, O. B. Gusev, Galina Khitrova

Research output: Contribution to journalArticle

Abstract

We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.

Original languageEnglish (US)
Pages (from-to)1595-1600
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue number9993
StatePublished - 1997

Fingerprint

Erbium
erbium
Ions
Semiconductor materials
matrices
Amorphous silicon
excitation
amorphous silicon
aluminum gallium arsenides
Luminescence
Quenching
ions
quenching
luminescence
Defects
defects
silicon
Temperature
temperature

Keywords

  • Erbium ions
  • Excitation of photoluminescence
  • Semiconductor matrices

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Yassievich, I. N., Bresler, M. S., Gusev, O. B., & Khitrova, G. (1997). Excitation and de-excitation of erbium ions in semiconductor matrices. Materials Science Forum, 258-263(9993), 1595-1600.

Excitation and de-excitation of erbium ions in semiconductor matrices. / Yassievich, I. N.; Bresler, M. S.; Gusev, O. B.; Khitrova, Galina.

In: Materials Science Forum, Vol. 258-263, No. 9993, 1997, p. 1595-1600.

Research output: Contribution to journalArticle

Yassievich, IN, Bresler, MS, Gusev, OB & Khitrova, G 1997, 'Excitation and de-excitation of erbium ions in semiconductor matrices', Materials Science Forum, vol. 258-263, no. 9993, pp. 1595-1600.
Yassievich IN, Bresler MS, Gusev OB, Khitrova G. Excitation and de-excitation of erbium ions in semiconductor matrices. Materials Science Forum. 1997;258-263(9993):1595-1600.
Yassievich, I. N. ; Bresler, M. S. ; Gusev, O. B. ; Khitrova, Galina. / Excitation and de-excitation of erbium ions in semiconductor matrices. In: Materials Science Forum. 1997 ; Vol. 258-263, No. 9993. pp. 1595-1600.
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