Excitation-induced dephasing in semiconductor quantum dots

H. C. Schneider, W. W. Chow, Stephan W Koch

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.

Original languageEnglish (US)
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number23
DOIs
StatePublished - Dec 2004
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
Kinetic theory
Coulomb interactions
quantum wells
Excitons
excitation
Wetting
kinetic theory
wetting
excitons
continuums
shift
interactions
LDS 751

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Excitation-induced dephasing in semiconductor quantum dots. / Schneider, H. C.; Chow, W. W.; Koch, Stephan W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 23, 12.2004, p. 1-4.

Research output: Contribution to journalArticle

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