Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider, W. W. Chow, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
Publication statusPublished - 2005
Externally publishedYes
EventQuantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2005
CountryUnited States
CityBaltimore, MD
Period5/22/055/22/05

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Schneider, H. C., Chow, W. W., & Koch, S. W. (2005). Excitation induced polarization decay in semiconductor quantum dots. In Optics InfoBase Conference Papers Optical Society of America.