Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider, W. W. Chow, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.

Original languageEnglish (US)
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2005
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
StatePublished - Jan 1 2005
EventQuantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2005
CountryUnited States
CityBaltimore, MD
Period5/22/055/22/05

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Schneider, H. C., Chow, W. W., & Koch, S. W. (2005). Excitation induced polarization decay in semiconductor quantum dots. In Quantum Electronics and Laser Science Conference, QELS 2005 (Optics InfoBase Conference Papers). Optical Society of America.