Abstract
Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.
| Original language | English (US) |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| Publisher | Optical Society of America |
| ISBN (Print) | 1557527709, 9781557527707 |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | Quantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States Duration: May 22 2005 → May 22 2005 |
Other
| Other | Quantum Electronics and Laser Science Conference, QELS 2005 |
|---|---|
| Country | United States |
| City | Baltimore, MD |
| Period | 5/22/05 → 5/22/05 |
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ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics
Cite this
Schneider, H. C., Chow, W. W., & Koch, S. W. (2005). Excitation induced polarization decay in semiconductor quantum dots. In Optics InfoBase Conference Papers Optical Society of America.