Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider; W. W. Chow; S. W. Koch

Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider, W. W. Chow, S. W. Koch

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.

Original language	English (US)
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2005
Publisher	Optical Society of America
ISBN (Print)	1557527709, 9781557527707
State	Published - Jan 1 2005
Event	Quantum Electronics and Laser Science Conference, QELS 2005 - Baltimore, MD, United States Duration: May 22 2005 → May 22 2005

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2005
Country	United States
City	Baltimore, MD
Period	5/22/05 → 5/22/05

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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Schneider, H. C., Chow, W. W., & Koch, S. W. (2005). Excitation induced polarization decay in semiconductor quantum dots. In Quantum Electronics and Laser Science Conference, QELS 2005 (Optics InfoBase Conference Papers). Optical Society of America.

@inproceedings{35b76348333447d0bcb4c173f8e41fa0,

title = "Excitation induced polarization decay in semiconductor quantum dots",

abstract = "Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.",

author = "Schneider, {H. C.} and Chow, {W. W.} and Koch, {S. W.}",

year = "2005",

month = jan,

day = "1",

language = "English (US)",

isbn = "1557527709",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2005",

note = "Quantum Electronics and Laser Science Conference, QELS 2005 ; Conference date: 22-05-2005 Through 22-05-2005",

}

TY - GEN

T1 - Excitation induced polarization decay in semiconductor quantum dots

AU - Schneider, H. C.

AU - Chow, W. W.

AU - Koch, S. W.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.

AB - Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84899504405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899504405&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84899504405

SN - 1557527709

SN - 9781557527707

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2005

PB - Optical Society of America

T2 - Quantum Electronics and Laser Science Conference, QELS 2005

Y2 - 22 May 2005 through 22 May 2005

ER -