Excitation induced polarization decay in semiconductor quantum dots

H. C. Schneider, W. W. Chow, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.

Original languageEnglish (US)
Title of host publication2005 Quantum Electronics and Laser Science Conference (QELS)
Pages540-542
Number of pages3
StatePublished - Oct 31 2005
Event2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

NameQuantum Electronics and Laser Science Conference (QELS)
Volume1

Other

Other2005 Quantum Electronics and Laser Science Conference (QELS)
CountryUnited States
CityBaltimore, MD
Period5/22/055/27/05

ASJC Scopus subject areas

  • Engineering(all)

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