Exciton formation and stability in semiconductor heterostructures

S. Siggelkow, W. Hoyer, M. Kira, Stephan W Koch

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The formation and stability of excitons in semiconductors is studied on the basis of a microscopic model that includes Coulomb interacting fermionic electrons and holes as well as phonons. Whereas quasiequilibrium calculations predict substantial exciton fractions coexisting with an electron-hole plasma at low temperatures and densities, dynamic calculations reveal that the exciton formation times under these conditions exceed the characteristic lifetimes. At elevated densities, good agreement between dynamical and quasiequilibrium calculations is obtained.

Original languageEnglish (US)
Article number073104
Pages (from-to)731041-731043
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number7
StatePublished - Feb 2004
Externally publishedYes

Fingerprint

Excitons
Heterojunctions
excitons
Semiconductor materials
Electrons
Phonons
phonons
Plasmas
life (durability)
LDS 751
electrons
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Exciton formation and stability in semiconductor heterostructures. / Siggelkow, S.; Hoyer, W.; Kira, M.; Koch, Stephan W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 7, 073104, 02.2004, p. 731041-731043.

Research output: Contribution to journalArticle

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