Exciton-polariton behaviour of the absorption edge of thin GaAs crystals with the "super-quantum" thickness and MQW enlarged barriers

G. N. Aliev, N. V. Lukyanova, R. P. Seisyan, M. R. Vladimirova, H. Gibbs, G. Khitrova

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At T = 1.7 K the optical absorption of pure GaAs samples with thickness d = 0.4 to 4.4 μm has been investigated in the region of the exciton-polariton resonances. The dependence of the integral absorption on the thickness is considered as a result of the competition of the optical processes in two different sample regions: near-surface region, where the integral absorption saturates due to increasing damping parameter in the electric field and central region, where the exciton-polariton is not perturbed. We have observed a series of narrow lines near the ground GaAs exciton state in the part of MQW spectra which belongs to the enlarged barrier. Calculations by the transfer matrix method give a good agreement with the model taking into account the quantization of the exciton as a whole and exciton-polariton wave interference.

Original languageEnglish (US)
Pages (from-to)193-197
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Issue number1
StatePublished - Jan 1 1997


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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