Exciton-polariton eigenmodes in light-coupled semiconductor multiple-quantum-well periodic structures

J. Prineas, C. Ell, E. Lee, G. Khitrova, H. Gibbs, S. Koch

Research output: Contribution to journalArticle

116 Scopus citations

Abstract

Features of exciton-polariton eigenmodes in a series of light-coupled (Formula presented) semiconductor multiple quantum wells with varying number of quantum wells (Formula presented) from 1 to 100, and with various periodicities (Bragg, near-Bragg, and anti-Bragg), are studied in linear measurements of reflection, transmission, and absorption. At Bragg periodicity (period (Formula presented) a photonic band-gap mode grows in amplitude and increases linearly in linewidth with increasing (Formula presented) The (Formula presented) times increased radiative damping rate is seen to arise from the light character of the eigenmode being swept out of a photonic band-gap structure. The slope of linewidth versus (Formula presented) gives the radiative linewidth of the exciton. Away from Bragg periodicity two branches of energy levels can be resolved in absorption, corresponding to the (Formula presented) exciton-polariton normal modes in the multiple-quantum-well structure. Signatures of individual modes becoming optically active are observed in the rich structure of reflection spectra for changing quantum-well periodicity. Antireflection coating of the samples is shown to be an effective way of thus isolating the multiple-quantum-well response.

Original languageEnglish (US)
Pages (from-to)13863-13872
Number of pages10
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number20
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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