Exciton-population inversion and terahertz gain in semiconductors excited to resonance

M. Kira, S. W. Koch

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

The increase in the exciton population in resonantly laser excited semiconductors was discussed. It was showed that polarization with a strict s-type radial symmetry can be efficiently converted into an incoherent p-type population for excitation around the 2s-exciton resonance. As a result, inversion between the 2p and 1s exciton states can be obtained leading to an increase in terahertz gain. The result is useful for terahertz amplification in a wide spectral range using different semiconductor materials.

Original languageEnglish (US)
Article number076402
Pages (from-to)076402-1-076402-4
JournalPhysical review letters
Volume93
Issue number7
DOIs
StatePublished - Aug 13 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Exciton-population inversion and terahertz gain in semiconductors excited to resonance'. Together they form a unique fingerprint.

Cite this