Exciton-population inversion and terahertz gain in semiconductors excited to resonance

M. Kira, S. W. Koch

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Abstract

The increase in the exciton population in resonantly laser excited semiconductors was discussed. It was showed that polarization with a strict s-type radial symmetry can be efficiently converted into an incoherent p-type population for excitation around the 2s-exciton resonance. As a result, inversion between the 2p and 1s exciton states can be obtained leading to an increase in terahertz gain. The result is useful for terahertz amplification in a wide spectral range using different semiconductor materials.

Original languageEnglish (US)
Pages (from-to)076402-1-076402-4
JournalPhysical review letters
Volume93
Issue number7
DOIs
StatePublished - Aug 13 2004

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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