Exciton tunneling in wide-bandgap semiconductors

Sergey Y. Ten, Fritz Henneberger, M. Rabe, Nasser Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells using femtosecond time resolved transmission, photoluminescence and time-resolved photoluminescence measurements. The strong Coulomb correlation as well as Frohlich electron LO-phonon interaction in II-VI semiconductors make the tunneling process significantly different from that in III-VI structures. We observe fast (1 ps) exciton tunneling out of the narrow well, although LO-phonon scattering is forbidden for holes in a single- particle picture. However, our theoretical analysis shows that tunneling of the exciton as a whole entity with the emission of only one LO-phonon is very slow. Instead, the exciton tunnels via an indirect state in a two-step process whose efficiency is dramatically enhanced by Coulomb effects.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages315-321
Number of pages7
Volume2693
DOIs
StatePublished - 1996
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996

Other

OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA
Period1/29/962/2/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Ten, S. Y., Henneberger, F., Rabe, M., & Peyghambarian, N. (1996). Exciton tunneling in wide-bandgap semiconductors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2693, pp. 315-321) https://doi.org/10.1117/12.238966