Excitonic effects, luminescence, and lasing in semiconductor microcavities

G. Khitrova, D. V. Wick, J. D. Berger, C. Ell, J. P. Prineas, T. R. Nelson, O. Lyngnes, H. M. Gibbs, M. Kira, F. Jahnke, S. W. Koch, W. Rühle, S. Hallstein

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Semiconductor microcavities containing one or more narrow-linenwidth quantum walls exhibit two transmission peaks when the exciton and cavity are in resonance. It will be shown that the transmission and photoluminescence properties of this system are very sensitive to excitonic optical nonlinearities such as exciton broadening, bandgap renormalization, and state filling. When the cavity mode is detuned to energies above the exciton, at low densities the emission from the lower branch is much larger than that from the upper branch. But as the density is increased the lower emission saturates and the upper emission grows rapidly, lasing at a density less than a factor of two above crossover. It will be shown that this striking crossover is not "boser action" due to a condensation into the upper branch as suggested by [1,2]. Rather it results from the density dependence of the transmission and carrier distribution functions as shown by the good agreement with a fully quantum mechanical microscopic theory for the luminescence from a microcavity.

Original languageEnglish (US)
Pages (from-to)3-18
Number of pages16
JournalPhysica Status Solidi (B) Basic Research
Volume206
Issue number1
DOIs
StatePublished - Mar 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Khitrova, G., Wick, D. V., Berger, J. D., Ell, C., Prineas, J. P., Nelson, T. R., Lyngnes, O., Gibbs, H. M., Kira, M., Jahnke, F., Koch, S. W., Rühle, W., & Hallstein, S. (1998). Excitonic effects, luminescence, and lasing in semiconductor microcavities. Physica Status Solidi (B) Basic Research, 206(1), 3-18. https://doi.org/10.1002/(sici)1521-3951(199803)206:1<3::aid-pssb3>3.0.co;2-s