Excitonic features in semiconductor microcavities

Claudia Ell, John Prineas, T. R. Nelson, Sahnggi Park, Eun Song Lee, Hyatt M. Gibbs, Galina Khitrova, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Excitons in a series of Fabry-Pérot microcavities are studied. Of particular interest is the influence of disorder and the subsequent differences compared to an atomic system. The atomic system is studied using a Lorentzian oscillator in a Fabry-Pérot resonator, while the reflection of the microcavity is modeled using a transfer matrix approach. The latter method incorporates a quantum well exciton that is already modified by the influence of a disordered potential. The effects of varying cavity finesse and exciton linewidth and line shape and their contributions to the linewidth of the normal-mode coupling peaks are investigated and compared with the experiments. It is shown that this approach can explain all of the observed experimental features.

Original languageEnglish (US)
Title of host publicationAdvances in Laser Physics
PublisherCRC Press
Pages67-83
Number of pages17
ISBN (Electronic)9781482298413
ISBN (Print)9789058230102
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

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  • Cite this

    Ell, C., Prineas, J., Nelson, T. R., Park, S., Lee, E. S., Gibbs, H. M., Khitrova, G., & Koch, S. W. (2000). Excitonic features in semiconductor microcavities. In Advances in Laser Physics (pp. 67-83). CRC Press.