The photoluminescence spectrum, along with the excitation-dependent absorption spectrum, at the exciton resonance at and above the bandgap were measured, following the above-bandgap picosecond excitation of very high quality InGaAs quantum wells. The spetra were taken over a wide range of carrier densities and lattice temperatures. The carrier temperature from the above-bandgap spectrum was obtained and carrier density from the reduction in exciton absorption was determined. The measured spectra were compared to spectra computed with a fully microscopic theory to determine whether the excitonic emission originate from the plasma or from an exciton population. Electron and hole in plasma come close together and emit a photon at the exciton resonance.
|Original language||English (US)|
|Number of pages||1|
|Journal||Optics and Photonics News|
|Publication status||Published - 2004|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics