Excitonic nonlinearities in semiconductor microcavities

F. Jahnke, M. Kira, S. W. Koch, O. Lyngnes, J. D. Berger, H. M. Gibbs, G. Khitrova

Research output: Contribution to conferencePaper

Abstract

The propagation of a single intense laser pulse through a semiconductor microcavity is presented where the pulse is resonant with 1 s exciton. A GaAs/AlAs microcavity structure was considered with two distributed Bragg reflectors. The light propagation in the multilayer system was solved by time-dependent Maxwell's equations. The source term of Maxwell's equations contains the macroscopic quantum well polarization, which is computed using many-body theory. The many-body treatment of carrier and polarization interaction within the second Born approximation scheme provides a consistent description of the nonlinear exciton saturation. This results from the broadening as well as reduction of exciton oscillator strength and band-gap renormalization.

Original languageEnglish (US)
Pages10-11
Number of pages2
StatePublished - Jan 1 1997
EventProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS
CityBaltimore, MD, USA
Period5/18/975/23/97

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Jahnke, F., Kira, M., Koch, S. W., Lyngnes, O., Berger, J. D., Gibbs, H. M., & Khitrova, G. (1997). Excitonic nonlinearities in semiconductor microcavities. 10-11. Paper presented at Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS, Baltimore, MD, USA, .