Excitonic nonlinearities in semiconductor microcavities

F. Jahnke, M. Kira, Stephan W Koch, O. Lyngnes, J. D. Berger, H. M. Gibbs, Galina Khitrova

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The propagation of a single intense laser pulse through a semiconductor microcavity is presented where the pulse is resonant with 1 s exciton. A GaAs/AlAs microcavity structure was considered with two distributed Bragg reflectors. The light propagation in the multilayer system was solved by time-dependent Maxwell's equations. The source term of Maxwell's equations contains the macroscopic quantum well polarization, which is computed using many-body theory. The many-body treatment of carrier and polarization interaction within the second Born approximation scheme provides a consistent description of the nonlinear exciton saturation. This results from the broadening as well as reduction of exciton oscillator strength and band-gap renormalization.

Original languageEnglish (US)
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Editors Anon
PublisherIEEE
Pages10-11
Number of pages2
Volume12
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS
CityBaltimore, MD, USA
Period5/18/975/23/97

Fingerprint

nonlinearity
excitons
Maxwell equation
propagation
Bragg reflectors
polarization
pulses
Born approximation
oscillator strengths
quantum wells
saturation
lasers
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Jahnke, F., Kira, M., Koch, S. W., Lyngnes, O., Berger, J. D., Gibbs, H. M., & Khitrova, G. (1997). Excitonic nonlinearities in semiconductor microcavities. In Anon (Ed.), Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 12, pp. 10-11). IEEE.

Excitonic nonlinearities in semiconductor microcavities. / Jahnke, F.; Kira, M.; Koch, Stephan W; Lyngnes, O.; Berger, J. D.; Gibbs, H. M.; Khitrova, Galina.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. ed. / Anon. Vol. 12 IEEE, 1997. p. 10-11.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jahnke, F, Kira, M, Koch, SW, Lyngnes, O, Berger, JD, Gibbs, HM & Khitrova, G 1997, Excitonic nonlinearities in semiconductor microcavities. in Anon (ed.), Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. vol. 12, IEEE, pp. 10-11, Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS, Baltimore, MD, USA, 5/18/97.
Jahnke F, Kira M, Koch SW, Lyngnes O, Berger JD, Gibbs HM et al. Excitonic nonlinearities in semiconductor microcavities. In Anon, editor, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 12. IEEE. 1997. p. 10-11
Jahnke, F. ; Kira, M. ; Koch, Stephan W ; Lyngnes, O. ; Berger, J. D. ; Gibbs, H. M. ; Khitrova, Galina. / Excitonic nonlinearities in semiconductor microcavities. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. editor / Anon. Vol. 12 IEEE, 1997. pp. 10-11
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