Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

S. Gies, C. Kruska, C. Berger, P. Hens, C. Fuchs, A. Ruiz Perez, N. W. Rosemann, J. Veletas, S. Chatterjee, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, W. Heimbrodt

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a "W"-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.

Original languageEnglish (US)
Article number182104
JournalApplied Physics Letters
Volume107
Issue number18
DOIs
StatePublished - Nov 2 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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