Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor

M. E. Donovan, A. Schulzgen, K. Wundke, Rudolf Binder, M. Lindberg, H. M. Gibbs, Galina Khitrova, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Data are presented which show eight excitonic density (Rabi) oscillations in an In0.1Ga0.9As/GaAs multiple quantum well at 5 K. Our time resolved, two-color pump-probe experimental technique for observing these oscillations is described. The quantum well sample geometry and linear spectrum are shown along with data characterizing the pump and probe pulses. Experimental data is shown to be in excellent agreement with our theoretical calculation of exciton density versus time, verifying the important affect of the Coulomb interaction between carriers in renormalizing the Rabi frequency. The theoretical calculations include the two-fold degenerate light-hole, heavy-hole, and valence bands in the Hartree-Fock form of the semiconductor Bloch equations, with all variables selected to conform to the experiment.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages216-223
Number of pages8
Volume3624
ISBN (Print)0819430943
StatePublished - 1999
EventProceedings of the 1999 Ultrafast Phenomena in Semiconductors III - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

Other

OtherProceedings of the 1999 Ultrafast Phenomena in Semiconductors III
CitySan Jose, CA, USA
Period1/27/991/29/99

Fingerprint

Semiconductor quantum wells
quantum wells
Pumps
pumps
Semiconductor materials
oscillations
probes
Valence bands
Coulomb interactions
Excitons
excitons
Color
valence
color
Geometry
geometry
pulses
Experiments
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Donovan, M. E., Schulzgen, A., Wundke, K., Binder, R., Lindberg, M., Gibbs, H. M., ... Peyghambarian, N. N. (1999). Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3624, pp. 216-223). Society of Photo-Optical Instrumentation Engineers.

Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor. / Donovan, M. E.; Schulzgen, A.; Wundke, K.; Binder, Rudolf; Lindberg, M.; Gibbs, H. M.; Khitrova, Galina; Peyghambarian, Nasser N.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3624 Society of Photo-Optical Instrumentation Engineers, 1999. p. 216-223.

Research output: Chapter in Book/Report/Conference proceedingChapter

Donovan, ME, Schulzgen, A, Wundke, K, Binder, R, Lindberg, M, Gibbs, HM, Khitrova, G & Peyghambarian, NN 1999, Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3624, Society of Photo-Optical Instrumentation Engineers, pp. 216-223, Proceedings of the 1999 Ultrafast Phenomena in Semiconductors III, San Jose, CA, USA, 1/27/99.
Donovan ME, Schulzgen A, Wundke K, Binder R, Lindberg M, Gibbs HM et al. Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3624. Society of Photo-Optical Instrumentation Engineers. 1999. p. 216-223
Donovan, M. E. ; Schulzgen, A. ; Wundke, K. ; Binder, Rudolf ; Lindberg, M. ; Gibbs, H. M. ; Khitrova, Galina ; Peyghambarian, Nasser N. / Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3624 Society of Photo-Optical Instrumentation Engineers, 1999. pp. 216-223
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AU - Schulzgen, A.

AU - Wundke, K.

AU - Binder, Rudolf

AU - Lindberg, M.

AU - Gibbs, H. M.

AU - Khitrova, Galina

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