Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor

M. E. Donovan, A. Schulzgen, K. Wundke, R. Binder, M. Lindberg, H. M. Gibbs, G. Khitrova, N. Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Data are presented which show eight excitonic density (Rabi) oscillations in an In0.1Ga0.9As/GaAs multiple quantum well at 5 K. Our time resolved, two-color pump-probe experimental technique for observing these oscillations is described. The quantum well sample geometry and linear spectrum are shown along with data characterizing the pump and probe pulses. Experimental data is shown to be in excellent agreement with our theoretical calculation of exciton density versus time, verifying the important affect of the Coulomb interaction between carriers in renormalizing the Rabi frequency. The theoretical calculations include the two-fold degenerate light-hole, heavy-hole, and valence bands in the Hartree-Fock form of the semiconductor Bloch equations, with all variables selected to conform to the experiment.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages216-223
Number of pages8
ISBN (Print)0819430943
StatePublished - Jan 1 1999
EventProceedings of the 1999 Ultrafast Phenomena in Semiconductors III - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3624
ISSN (Print)0277-786X

Other

OtherProceedings of the 1999 Ultrafast Phenomena in Semiconductors III
CitySan Jose, CA, USA
Period1/27/991/29/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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