Abstract
The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
Original language | English (US) |
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Pages (from-to) | 6828-6831 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 43 |
Issue number | 8 |
DOIs | |
State | Published - Jan 1 1991 |
ASJC Scopus subject areas
- Condensed Matter Physics