Abstract
The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6828-6831 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 43 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Experiments on scaling in AlxGa1-xAs/GaAs heterostructures under quantum Hall conditions. / Koch, Stephan W; Haug, R. J.; Klitzing, K. V.; Ploog, K.
In: Physical Review B, Vol. 43, No. 8, 1991, p. 6828-6831.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experiments on scaling in AlxGa1-xAs/GaAs heterostructures under quantum Hall conditions
AU - Koch, Stephan W
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Ploog, K.
PY - 1991
Y1 - 1991
N2 - The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
AB - The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
UR - http://www.scopus.com/inward/record.url?scp=26744450450&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=26744450450&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.43.6828
DO - 10.1103/PhysRevB.43.6828
M3 - Article
AN - SCOPUS:26744450450
VL - 43
SP - 6828
EP - 6831
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 8
ER -