Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical properties

P. M. Smowton, G. M. Lewis, P. Blood, W. W. Chow, S. W. Koch

Research output: Contribution to journalArticle

Abstract

The performance of GaInP quantum well lasers remains limited by non-radiative and carrier leakage losses. These non-radiative losses was quantitatively analyzed through detailed comparison of experimental gain and spontaneous emission spectra with a verified theoretical model. Even in the absence of carrier leakage, there is a substantial contribution to the room temperature threshold current from non-radiative recombination within the wells themselves. The laser consists of a 6.8 nm wide, 0.8% compressively strained quantum well set in an (Al0.5Ga0.5)InP waveguide core region and clad with (Al0.7Ga0.3)InP. The threshold current varies linearly with temperature so the thermally-activated leakage current at this temperature is small.

Original languageEnglish (US)
Pages (from-to)121-122
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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