Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation

W. R. Buchwald, A. Balekdjian, J. Conrad, J. W. Burger, J. S.H. Schoenberg, J. S. Tyo, M. D. Abdalla, S. M. Ahern, M. C. Skipper

Research output: Contribution to conferencePaper

6 Scopus citations

Abstract

The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, high-power photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333A into a 75 Ω load, and lifetimes in excess of 2×106 shots at 10 Hz. Later generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.

Original languageEnglish (US)
Pages970-974
Number of pages5
StatePublished - Dec 1 1997
EventProceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) - Baltimore, MD, USA
Duration: Jun 29 1997Jul 2 1997

Other

OtherProceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2)
CityBaltimore, MD, USA
Period6/29/977/2/97

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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    Buchwald, W. R., Balekdjian, A., Conrad, J., Burger, J. W., Schoenberg, J. S. H., Tyo, J. S., Abdalla, M. D., Ahern, S. M., & Skipper, M. C. (1997). Fabrication and design issues of bulk photoconductive switches used for ultra-wideband, high-power microwave generation. 970-974. Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .