Abstract
We present our latest results on the fabrication and properties of high-Tc Nb3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation Ic∝ (T′c-T)3/2 for T<T′c, and Ic∝exp(-γT) for T≳T′c, where T′c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb3Sn thin-film SQUID's with sensing area ∼3 mm2 have been successfully fabricated using these weak links.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 361-365 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 49 |
| Issue number | 1 |
| DOIs | |
| State | Published - Dec 1 1978 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Wu, C. T., & Falco, C. M. (1978). Fabrication and properties of high-temperature weak links and SQUID's. Journal of Applied Physics, 49(1), 361-365. https://doi.org/10.1063/1.324397