Abstract
Results are presented on the fabrication and properties of high-T//c Nb//3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. High-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques have been successfully fabricated using radiation damage. High-temperature (operation temperature greater than 14. 5 K) Nb//3Sn thin-film SQUID's with sensing area approximately 3 mm**2 have been successfully fabricated using these weak links.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 361-365 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 49 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1978 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
FABRICATION AND PROPERTIES OF HIGH-TEMPERATURE WEAK LINKS AND SQUID'S. / Wu, C. T.; Falco, Charles M.
In: Journal of Applied Physics, Vol. 49, No. 1, 01.1978, p. 361-365.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - FABRICATION AND PROPERTIES OF HIGH-TEMPERATURE WEAK LINKS AND SQUID'S.
AU - Wu, C. T.
AU - Falco, Charles M
PY - 1978/1
Y1 - 1978/1
N2 - Results are presented on the fabrication and properties of high-T//c Nb//3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. High-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques have been successfully fabricated using radiation damage. High-temperature (operation temperature greater than 14. 5 K) Nb//3Sn thin-film SQUID's with sensing area approximately 3 mm**2 have been successfully fabricated using these weak links.
AB - Results are presented on the fabrication and properties of high-T//c Nb//3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. High-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques have been successfully fabricated using radiation damage. High-temperature (operation temperature greater than 14. 5 K) Nb//3Sn thin-film SQUID's with sensing area approximately 3 mm**2 have been successfully fabricated using these weak links.
UR - http://www.scopus.com/inward/record.url?scp=0017905744&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0017905744&partnerID=8YFLogxK
U2 - 10.1063/1.324397
DO - 10.1063/1.324397
M3 - Article
AN - SCOPUS:0017905744
VL - 49
SP - 361
EP - 365
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
ER -