Fabrication and properties of high-temperature weak links and SQUID's

C. T. Wu; Charles M. Falco

doi:10.1063/1.324397

Fabrication and properties of high-temperature weak links and SQUID's

C. T. Wu, Charles M. Falco

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present our latest results on the fabrication and properties of high-T_c Nb₃Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation I_c∝ (T′_c-T)^3/2 for T<T′_c, and I_c∝exp(-γT) for T≳T′_c, where T′_c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb₃Sn thin-film SQUID's with sensing area ∼3 mm² have been successfully fabricated using these weak links.

Original language	English (US)
Pages (from-to)	361-365
Number of pages	5
Journal	Journal of Applied Physics
Volume	49
Issue number	1
DOIs	https://doi.org/10.1063/1.324397
State	Published - Dec 1 1978

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Fabrication and properties of high-temperature weak links and SQUID's",

abstract = "We present our latest results on the fabrication and properties of high-Tc Nb3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation Ic∝ (T′c-T)3/2 for T<T′c, and Ic∝exp(-γT) for T≳T′c, where T′c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb3Sn thin-film SQUID's with sensing area ∼3 mm2 have been successfully fabricated using these weak links.",

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N2 - We present our latest results on the fabrication and properties of high-Tc Nb3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation Ic∝ (T′c-T)3/2 for T<T′c, and Ic∝exp(-γT) for T≳T′c, where T′c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb3Sn thin-film SQUID's with sensing area ∼3 mm2 have been successfully fabricated using these weak links.

AB - We present our latest results on the fabrication and properties of high-Tc Nb3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation Ic∝ (T′c-T)3/2 for T<T′c, and Ic∝exp(-γT) for T≳T′c, where T′c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb3Sn thin-film SQUID's with sensing area ∼3 mm2 have been successfully fabricated using these weak links.

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