Fabrication and properties of high-temperature weak links and SQUID's

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3 Scopus citations


We present our latest results on the fabrication and properties of high-Tc Nb3Sn thin-film weak links and SQUID's prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation Ic∝ (T′c-T)3/2 for T<T′c, and Ic∝exp(-γT) for T≳T′c, where T′c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb3Sn thin-film SQUID's with sensing area ∼3 mm2 have been successfully fabricated using these weak links.

Original languageEnglish (US)
Pages (from-to)361-365
Number of pages5
JournalJournal of Applied Physics
Issue number1
StatePublished - 1978

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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