Fabrication of GaAs nanometer scale structures by dry etching

T. Iwabuchi, C. Chuang, Galina Khitrova, M. E. Warren, A. Chavez-Pirson, H. M. Gibbs, D. Sarid, M. Gallagher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Nanometer-sized features as small as 400 A have been fabricated in single-quantum-well GaAs/AlGaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMurray J. Gibson, Harold G. Craighead
PublisherPubl by Int Soc for Optical Engineering
Pages142-148
Number of pages7
Volume1284
ISBN (Print)0819403350
StatePublished - 1990
EventNanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA
Duration: Mar 20 1990Mar 21 1990

Other

OtherNanostructures and Microstructure Correlation with Physical Properties of Semiconductors
CitySan Diego, CA, USA
Period3/20/903/21/90

Fingerprint

Quantum confinement
Dry etching
Semiconductor quantum wells
Semiconductor quantum dots
aluminum gallium arsenides
Heterojunctions
Masks
masks
quantum dots
etching
quantum wells
Fabrication
Scanning electron microscopy
fabrication
scanning electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Iwabuchi, T., Chuang, C., Khitrova, G., Warren, M. E., Chavez-Pirson, A., Gibbs, H. M., ... Gallagher, M. (1990). Fabrication of GaAs nanometer scale structures by dry etching. In M. J. Gibson, & H. G. Craighead (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1284, pp. 142-148). Publ by Int Soc for Optical Engineering.

Fabrication of GaAs nanometer scale structures by dry etching. / Iwabuchi, T.; Chuang, C.; Khitrova, Galina; Warren, M. E.; Chavez-Pirson, A.; Gibbs, H. M.; Sarid, D.; Gallagher, M.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Murray J. Gibson; Harold G. Craighead. Vol. 1284 Publ by Int Soc for Optical Engineering, 1990. p. 142-148.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iwabuchi, T, Chuang, C, Khitrova, G, Warren, ME, Chavez-Pirson, A, Gibbs, HM, Sarid, D & Gallagher, M 1990, Fabrication of GaAs nanometer scale structures by dry etching. in MJ Gibson & HG Craighead (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1284, Publ by Int Soc for Optical Engineering, pp. 142-148, Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors, San Diego, CA, USA, 3/20/90.
Iwabuchi T, Chuang C, Khitrova G, Warren ME, Chavez-Pirson A, Gibbs HM et al. Fabrication of GaAs nanometer scale structures by dry etching. In Gibson MJ, Craighead HG, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1284. Publ by Int Soc for Optical Engineering. 1990. p. 142-148
Iwabuchi, T. ; Chuang, C. ; Khitrova, Galina ; Warren, M. E. ; Chavez-Pirson, A. ; Gibbs, H. M. ; Sarid, D. ; Gallagher, M. / Fabrication of GaAs nanometer scale structures by dry etching. Proceedings of SPIE - The International Society for Optical Engineering. editor / Murray J. Gibson ; Harold G. Craighead. Vol. 1284 Publ by Int Soc for Optical Engineering, 1990. pp. 142-148
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