Fabrication of gaas nanometer scale structures by dry etching

T. Iwabuchi, C. Chuang, G. Khitrova, M. E. Warren, A. Chavez-Pirson, H. M. Gibbs, D. Sand, M. Gallagher

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

Nanometer-sized features as small as 400Åhave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

Original languageEnglish (US)
Pages (from-to)142-148
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1284
DOIs
StatePublished - Oct 1 1990
EventNanostructure and Microstructure Correlation with Physical Properties of Semiconductors 1990 - San Diego, United States
Duration: Mar 17 1990Mar 21 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Iwabuchi, T., Chuang, C., Khitrova, G., Warren, M. E., Chavez-Pirson, A., Gibbs, H. M., Sand, D., & Gallagher, M. (1990). Fabrication of gaas nanometer scale structures by dry etching. Proceedings of SPIE - The International Society for Optical Engineering, 1284, 142-148. https://doi.org/10.1117/12.20783