Fabrication of GaAs nanometer scale structures by dry etching

T. Iwabuchi, C. Chuang, Galina Khitrova, M. E. Warren, A. Chavez-Pirson, H. M. Gibbs, D. Sarid, M. Gallagher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Nanometer-sized features as small as 400 A have been fabricated in single-quantum-well GaAs/AlGaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMurray J. Gibson, Harold G. Craighead
PublisherPubl by Int Soc for Optical Engineering
Pages142-148
Number of pages7
Volume1284
ISBN (Print)0819403350
Publication statusPublished - 1990
EventNanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA
Duration: Mar 20 1990Mar 21 1990

Other

OtherNanostructures and Microstructure Correlation with Physical Properties of Semiconductors
CitySan Diego, CA, USA
Period3/20/903/21/90

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Iwabuchi, T., Chuang, C., Khitrova, G., Warren, M. E., Chavez-Pirson, A., Gibbs, H. M., ... Gallagher, M. (1990). Fabrication of GaAs nanometer scale structures by dry etching. In M. J. Gibson, & H. G. Craighead (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1284, pp. 142-148). Publ by Int Soc for Optical Engineering.