Fabrication of octagonal and dodecagonal single crystal Si micropyramids via etching without using a pre-patterned mask

Haokun Deng, Stephen A. Hackney, Katerina E Aifantis

Research output: Contribution to journalArticle

Abstract

Surface texturing of Si has attracted significant attention over the past decades as micro/nano patterns allow for preferred opto-electronic and electrochemical properties. Here a new fabrication method, based on etching in aqueous NaOH-polyethylene glycol solution is presented, which allows the formation of novel eight and twelve sided Si micropyramids. Particularly, the presence of NaOH resulted in the formation of four sided facets along intersecting {111} planes, while with continuous etching the high molar mass polyethylene glycol resulted in the formation of four additional facets identified to be (212) planes producing octagonal pyramids. Further etching of these octagonal pyramids lead to the formation of twelve-sided pyramids. Eight-faceted (octagonal) pyramids have been reported in the literature, but only through the use of photolithography, while twelve-faceted (dodecagonal) pyramids have not been observed for any type of crystal.

Original languageEnglish (US)
Pages (from-to)36-43
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume93
DOIs
StatePublished - Apr 1 2019
Externally publishedYes

Fingerprint

pyramids
Masks
Etching
masks
etching
Single crystals
Fabrication
Polyethylene glycols
fabrication
single crystals
Molar mass
Texturing
Photolithography
glycols
polyethylenes
flat surfaces
Electrochemical properties
Electronic properties
photolithography
Crystals

Keywords

  • Dodecagon
  • Etching
  • Octagon
  • Polyethylene glycol
  • Pyramids
  • Si patterning

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fabrication of octagonal and dodecagonal single crystal Si micropyramids via etching without using a pre-patterned mask. / Deng, Haokun; Hackney, Stephen A.; Aifantis, Katerina E.

In: Materials Science in Semiconductor Processing, Vol. 93, 01.04.2019, p. 36-43.

Research output: Contribution to journalArticle

@article{fd60cb5c2b9d44ecbca35f5ef5a1c41c,
title = "Fabrication of octagonal and dodecagonal single crystal Si micropyramids via etching without using a pre-patterned mask",
abstract = "Surface texturing of Si has attracted significant attention over the past decades as micro/nano patterns allow for preferred opto-electronic and electrochemical properties. Here a new fabrication method, based on etching in aqueous NaOH-polyethylene glycol solution is presented, which allows the formation of novel eight and twelve sided Si micropyramids. Particularly, the presence of NaOH resulted in the formation of four sided facets along intersecting {111} planes, while with continuous etching the high molar mass polyethylene glycol resulted in the formation of four additional facets identified to be (212) planes producing octagonal pyramids. Further etching of these octagonal pyramids lead to the formation of twelve-sided pyramids. Eight-faceted (octagonal) pyramids have been reported in the literature, but only through the use of photolithography, while twelve-faceted (dodecagonal) pyramids have not been observed for any type of crystal.",
keywords = "Dodecagon, Etching, Octagon, Polyethylene glycol, Pyramids, Si patterning",
author = "Haokun Deng and Hackney, {Stephen A.} and Aifantis, {Katerina E}",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.mssp.2018.12.017",
language = "English (US)",
volume = "93",
pages = "36--43",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Fabrication of octagonal and dodecagonal single crystal Si micropyramids via etching without using a pre-patterned mask

AU - Deng, Haokun

AU - Hackney, Stephen A.

AU - Aifantis, Katerina E

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Surface texturing of Si has attracted significant attention over the past decades as micro/nano patterns allow for preferred opto-electronic and electrochemical properties. Here a new fabrication method, based on etching in aqueous NaOH-polyethylene glycol solution is presented, which allows the formation of novel eight and twelve sided Si micropyramids. Particularly, the presence of NaOH resulted in the formation of four sided facets along intersecting {111} planes, while with continuous etching the high molar mass polyethylene glycol resulted in the formation of four additional facets identified to be (212) planes producing octagonal pyramids. Further etching of these octagonal pyramids lead to the formation of twelve-sided pyramids. Eight-faceted (octagonal) pyramids have been reported in the literature, but only through the use of photolithography, while twelve-faceted (dodecagonal) pyramids have not been observed for any type of crystal.

AB - Surface texturing of Si has attracted significant attention over the past decades as micro/nano patterns allow for preferred opto-electronic and electrochemical properties. Here a new fabrication method, based on etching in aqueous NaOH-polyethylene glycol solution is presented, which allows the formation of novel eight and twelve sided Si micropyramids. Particularly, the presence of NaOH resulted in the formation of four sided facets along intersecting {111} planes, while with continuous etching the high molar mass polyethylene glycol resulted in the formation of four additional facets identified to be (212) planes producing octagonal pyramids. Further etching of these octagonal pyramids lead to the formation of twelve-sided pyramids. Eight-faceted (octagonal) pyramids have been reported in the literature, but only through the use of photolithography, while twelve-faceted (dodecagonal) pyramids have not been observed for any type of crystal.

KW - Dodecagon

KW - Etching

KW - Octagon

KW - Polyethylene glycol

KW - Pyramids

KW - Si patterning

UR - http://www.scopus.com/inward/record.url?scp=85059169113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059169113&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2018.12.017

DO - 10.1016/j.mssp.2018.12.017

M3 - Article

AN - SCOPUS:85059169113

VL - 93

SP - 36

EP - 43

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -