Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

Ming Lun Tseng, Bo Han Chen, Cheng Hung Chu, Chia Min Chang, Wei Chih Lin, Nien Nan Chu, Masud Mansuripur, Ai Qun Liu, Din Ping Tsai

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Femtosecond laser pulses are focused on a thin film of Ge 2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices.

Original languageEnglish (US)
Pages (from-to)16975-16984
Number of pages10
JournalOptics Express
Volume19
Issue number18
DOIs
StatePublished - Aug 29 2011

    Fingerprint

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Tseng, M. L., Chen, B. H., Chu, C. H., Chang, C. M., Lin, W. C., Chu, N. N., Mansuripur, M., Liu, A. Q., & Tsai, D. P. (2011). Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer. Optics Express, 19(18), 16975-16984. https://doi.org/10.1364/OE.19.016975