Feasibility of detecting barrier layer to low-k transition in copper CMP using Raman spectroscopy

S. Kondoju, C. Juncker, P. Lucas, S. Raghavan, P. Fischer, M. Moinpour, A. Oehler

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

In copper CMP, transitions from copper to barrier as well as barrier to dielectric layer are typically sensed in situ using an optical reflectance technique. Spectroscopic techniques such as Raman, which allow monitoring the vibrational modes of silicon and low-k layers, have interesting potential for detecting these transitions. In this paper the use of Raman spectroscopy in detecting in situ removal of barrier layers from CDO materials is reported. Intensities of Raman peaks characteristic of Si-Si vibrations from Si substrate and C-H vibrations from low-k materials have been used for monitoring CDO layer thickness and detecting removal of Ta overlayer. An abrasion cell is integrated with a Raman spectrometer to demonstrate the feasibility of Raman monitoring in-situ. Capabilities and limitations of the Raman spectroscopic method are discussed.

Original languageEnglish (US)
Article numberW2.4
Pages (from-to)175-181
Number of pages7
JournalMaterials Research Society Symposium Proceedings
Volume867
StatePublished - Dec 1 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Mar 31 2005

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Feasibility of detecting barrier layer to low-k transition in copper CMP using Raman spectroscopy'. Together they form a unique fingerprint.

Cite this