FEM simulation of micro-rotating-structures and their applications in measurement of residual stresses in thin films

Xin Zhang, Tong Yi Zhang, Yitshak Zohar

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

FEM simulation of micro-rotating-structures was performed for local measurement of residual stresses in thin films. A sensitivity factor is introduced, studied and tabulated from the simulation results. The residual stress can be evaluated from the rotating deflection, the lengths of rotating and fixed beams, and the sensitivity factor. The micro-structure technique was applied to measure residual stresses in both silicon nitride and polysilicon thin films, before and after rapid thermal annealing (RTA), and further confirmed by wafer curvature method. Residual stresses in polysilicon films at different RTA stages were also characterized by micro-Raman spectroscopy (MRS). The experimental results indicate that micro-rotating-structures indeed have the ability to measure spatially and locally residual stresses in MEMS thin films with appropriate sensitivities.

Original languageEnglish (US)
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume505
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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