Femtosecond pulse compression and adiabatic following in semiconductor amplifiers

Research output: Contribution to conferencePaper

Abstract

Reported here we studies of a plane wave femtosecond pulse propagating in a semiconductor amplifier over gain lengths. Preliminary results on the extension of the study include transverse spatial effects necessary to model realistic waveguiding and broad area amplifier structures will also be discussed. For a plane wave pulse, it is concluded that after initial linear amplification and saturation, the pulse undergoes strong intensity and spectral deformation before settling into a strongly compressed intense superluminal pulse undergoing adiabatic following (AF) with off-resonant noninverted states, well above the chemical potential.

Original languageEnglish (US)
Pages163-165
Number of pages3
StatePublished - Dec 1 1994
EventProceedings of the 1994 IEEE Nonlinear Optics: Materials, Fundamentals and Applications - Waikoloa, HI, USA
Duration: Jul 25 1994Jul 29 1994

Other

OtherProceedings of the 1994 IEEE Nonlinear Optics: Materials, Fundamentals and Applications
CityWaikoloa, HI, USA
Period7/25/947/29/94

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Indik, R. A., Moloney, J. V., & Binder, R. (1994). Femtosecond pulse compression and adiabatic following in semiconductor amplifiers. 163-165. Paper presented at Proceedings of the 1994 IEEE Nonlinear Optics: Materials, Fundamentals and Applications, Waikoloa, HI, USA, .