Ferroelectric thin film bismuth titanate prepared from acetate precursor

Yanxia Lu, David T. Hoelzer, Walter A. Schulze, Bruce Tuttle, Barrett G Potter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bismuth Titanate (Bi4Ti3O12) thin films were fabricated by spin coat deposition - rapid thermal processing (RTP) technique. Acetate derived solution for deposition was synthesized by blending dissolved bismuth acetate in aqueous acetic acid, and then adding with titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi4Ti3O12 films deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500°C or less for these Bi4Ti3O12 films, a 700°C crystallization treatment was used to obtain single phase perovskite films. Bi4Ti3O12 film crystallographic orientation was shown to depend on three factors: substrate, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack-free and had grain sizes ranging from 20 nm to 400 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 μC/cm2 and a coercive field of 98 kv/cm was measured for this film that was crystallized at 700°C.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
Editors Anon
PublisherIEEE
Pages348-351
Number of pages4
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics - University Park, PA, USA
Duration: Aug 7 1994Aug 10 1994

Other

OtherProceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics
CityUniversity Park, PA, USA
Period8/7/948/10/94

Fingerprint

Ferroelectric thin films
Bismuth
Acetates
Substrates
Crystallization
Perovskite
Transmission electron microscopy
Rapid thermal processing
bismuth titanate
Remanence
Ellipsometry
Titanium
Silver
Thick films
Acetic acid
Acetic Acid
Metal foil
Ferroelectric materials
Film thickness
Refractive index

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Lu, Y., Hoelzer, D. T., Schulze, W. A., Tuttle, B., & Potter, B. G. (1994). Ferroelectric thin film bismuth titanate prepared from acetate precursor. In Anon (Ed.), IEEE International Symposium on Applications of Ferroelectrics (pp. 348-351). IEEE.

Ferroelectric thin film bismuth titanate prepared from acetate precursor. / Lu, Yanxia; Hoelzer, David T.; Schulze, Walter A.; Tuttle, Bruce; Potter, Barrett G.

IEEE International Symposium on Applications of Ferroelectrics. ed. / Anon. IEEE, 1994. p. 348-351.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lu, Y, Hoelzer, DT, Schulze, WA, Tuttle, B & Potter, BG 1994, Ferroelectric thin film bismuth titanate prepared from acetate precursor. in Anon (ed.), IEEE International Symposium on Applications of Ferroelectrics. IEEE, pp. 348-351, Proceedings of the 1994 9th IEEE International Symposium on Applications of Ferroelectrics, University Park, PA, USA, 8/7/94.
Lu Y, Hoelzer DT, Schulze WA, Tuttle B, Potter BG. Ferroelectric thin film bismuth titanate prepared from acetate precursor. In Anon, editor, IEEE International Symposium on Applications of Ferroelectrics. IEEE. 1994. p. 348-351
Lu, Yanxia ; Hoelzer, David T. ; Schulze, Walter A. ; Tuttle, Bruce ; Potter, Barrett G. / Ferroelectric thin film bismuth titanate prepared from acetate precursor. IEEE International Symposium on Applications of Ferroelectrics. editor / Anon. IEEE, 1994. pp. 348-351
@inproceedings{47f53da0879848779a47c7c1f5fc3198,
title = "Ferroelectric thin film bismuth titanate prepared from acetate precursor",
abstract = "Bismuth Titanate (Bi4Ti3O12) thin films were fabricated by spin coat deposition - rapid thermal processing (RTP) technique. Acetate derived solution for deposition was synthesized by blending dissolved bismuth acetate in aqueous acetic acid, and then adding with titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi4Ti3O12 films deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500°C or less for these Bi4Ti3O12 films, a 700°C crystallization treatment was used to obtain single phase perovskite films. Bi4Ti3O12 film crystallographic orientation was shown to depend on three factors: substrate, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack-free and had grain sizes ranging from 20 nm to 400 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 μC/cm2 and a coercive field of 98 kv/cm was measured for this film that was crystallized at 700°C.",
author = "Yanxia Lu and Hoelzer, {David T.} and Schulze, {Walter A.} and Bruce Tuttle and Potter, {Barrett G}",
year = "1994",
language = "English (US)",
pages = "348--351",
editor = "Anon",
booktitle = "IEEE International Symposium on Applications of Ferroelectrics",
publisher = "IEEE",

}

TY - GEN

T1 - Ferroelectric thin film bismuth titanate prepared from acetate precursor

AU - Lu, Yanxia

AU - Hoelzer, David T.

AU - Schulze, Walter A.

AU - Tuttle, Bruce

AU - Potter, Barrett G

PY - 1994

Y1 - 1994

N2 - Bismuth Titanate (Bi4Ti3O12) thin films were fabricated by spin coat deposition - rapid thermal processing (RTP) technique. Acetate derived solution for deposition was synthesized by blending dissolved bismuth acetate in aqueous acetic acid, and then adding with titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi4Ti3O12 films deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500°C or less for these Bi4Ti3O12 films, a 700°C crystallization treatment was used to obtain single phase perovskite films. Bi4Ti3O12 film crystallographic orientation was shown to depend on three factors: substrate, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack-free and had grain sizes ranging from 20 nm to 400 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 μC/cm2 and a coercive field of 98 kv/cm was measured for this film that was crystallized at 700°C.

AB - Bismuth Titanate (Bi4Ti3O12) thin films were fabricated by spin coat deposition - rapid thermal processing (RTP) technique. Acetate derived solution for deposition was synthesized by blending dissolved bismuth acetate in aqueous acetic acid, and then adding with titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi4Ti3O12 films deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500°C or less for these Bi4Ti3O12 films, a 700°C crystallization treatment was used to obtain single phase perovskite films. Bi4Ti3O12 film crystallographic orientation was shown to depend on three factors: substrate, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack-free and had grain sizes ranging from 20 nm to 400 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 μC/cm2 and a coercive field of 98 kv/cm was measured for this film that was crystallized at 700°C.

UR - http://www.scopus.com/inward/record.url?scp=0028704924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028704924&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028704924

SP - 348

EP - 351

BT - IEEE International Symposium on Applications of Ferroelectrics

A2 - Anon, null

PB - IEEE

ER -