Field-effect transistors for efficient integrated optoelectronic sensors

F. Therez, Mahmoud Fallahi, R. Leguerre, D. Esteve, D. Kendil

Research output: Contribution to journalArticle

Abstract

Integrated receivers associating an amplifier with a photodiode are studied. The field effect transistor used for the amplifier has been designed and characterized. The FET tran-sistor has been fabricated on a GaAs semi-insulating substrate using Liquid Phase Epitaxy. The structure consists of two epitaxial layers, i.e. one N-GaAs layer for the channel and a P-GaAlAs layer for the gate. The design, technological process and current-voltage characteristics are described. Transconductance values over 10 mA/V have been achieved and the transistor have shown a threshold voltage of -4.6 volts. Integrated receivers whose field effect transistor is associated with a photodiode, enhance the detector sensitivity. The results measured on the device show current gain of 15 with a photodiode load resistance set to 2 kSt… Optical sensitivity and current amplification better than 15 are found on transistors with a high doping level ND. The results shown by the FET will be applied to a type of sensor presenting static optical responsivity.

Original languageEnglish (US)
Pages (from-to)35-39
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume865
DOIs
StatePublished - May 3 1988
Externally publishedYes

Fingerprint

Integrated optoelectronics
Field-effect Transistor
Photodiode
Optoelectronics
Field effect transistors
field effect transistors
Photodiodes
Gallium Arsenide
photodiodes
Sensor
sensors
Sensors
Receiver
Voltage
Responsivity
Transistors
transistors
Epitaxy
receivers
amplifiers

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Field-effect transistors for efficient integrated optoelectronic sensors. / Therez, F.; Fallahi, Mahmoud; Leguerre, R.; Esteve, D.; Kendil, D.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 865, 03.05.1988, p. 35-39.

Research output: Contribution to journalArticle

@article{6253e5c9442441ffa42a9c52cfc2be18,
title = "Field-effect transistors for efficient integrated optoelectronic sensors",
abstract = "Integrated receivers associating an amplifier with a photodiode are studied. The field effect transistor used for the amplifier has been designed and characterized. The FET tran-sistor has been fabricated on a GaAs semi-insulating substrate using Liquid Phase Epitaxy. The structure consists of two epitaxial layers, i.e. one N-GaAs layer for the channel and a P-GaAlAs layer for the gate. The design, technological process and current-voltage characteristics are described. Transconductance values over 10 mA/V have been achieved and the transistor have shown a threshold voltage of -4.6 volts. Integrated receivers whose field effect transistor is associated with a photodiode, enhance the detector sensitivity. The results measured on the device show current gain of 15 with a photodiode load resistance set to 2 kSt… Optical sensitivity and current amplification better than 15 are found on transistors with a high doping level ND. The results shown by the FET will be applied to a type of sensor presenting static optical responsivity.",
author = "F. Therez and Mahmoud Fallahi and R. Leguerre and D. Esteve and D. Kendil",
year = "1988",
month = "5",
day = "3",
doi = "10.1117/12.943542",
language = "English (US)",
volume = "865",
pages = "35--39",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Field-effect transistors for efficient integrated optoelectronic sensors

AU - Therez, F.

AU - Fallahi, Mahmoud

AU - Leguerre, R.

AU - Esteve, D.

AU - Kendil, D.

PY - 1988/5/3

Y1 - 1988/5/3

N2 - Integrated receivers associating an amplifier with a photodiode are studied. The field effect transistor used for the amplifier has been designed and characterized. The FET tran-sistor has been fabricated on a GaAs semi-insulating substrate using Liquid Phase Epitaxy. The structure consists of two epitaxial layers, i.e. one N-GaAs layer for the channel and a P-GaAlAs layer for the gate. The design, technological process and current-voltage characteristics are described. Transconductance values over 10 mA/V have been achieved and the transistor have shown a threshold voltage of -4.6 volts. Integrated receivers whose field effect transistor is associated with a photodiode, enhance the detector sensitivity. The results measured on the device show current gain of 15 with a photodiode load resistance set to 2 kSt… Optical sensitivity and current amplification better than 15 are found on transistors with a high doping level ND. The results shown by the FET will be applied to a type of sensor presenting static optical responsivity.

AB - Integrated receivers associating an amplifier with a photodiode are studied. The field effect transistor used for the amplifier has been designed and characterized. The FET tran-sistor has been fabricated on a GaAs semi-insulating substrate using Liquid Phase Epitaxy. The structure consists of two epitaxial layers, i.e. one N-GaAs layer for the channel and a P-GaAlAs layer for the gate. The design, technological process and current-voltage characteristics are described. Transconductance values over 10 mA/V have been achieved and the transistor have shown a threshold voltage of -4.6 volts. Integrated receivers whose field effect transistor is associated with a photodiode, enhance the detector sensitivity. The results measured on the device show current gain of 15 with a photodiode load resistance set to 2 kSt… Optical sensitivity and current amplification better than 15 are found on transistors with a high doping level ND. The results shown by the FET will be applied to a type of sensor presenting static optical responsivity.

UR - http://www.scopus.com/inward/record.url?scp=84957466246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957466246&partnerID=8YFLogxK

U2 - 10.1117/12.943542

DO - 10.1117/12.943542

M3 - Article

VL - 865

SP - 35

EP - 39

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -