Formation of sharply peaked sidelobesin large aperture single-passsemiconductor laser amplifiers

J. K. White, J. G. Mclnerney, J. V. Moloney

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Single-pass semiconductor laser amplifiers are shown theoretically to exhibits harply peak edlobes (batears') at the edges of the ne ar-fic ldoutput. We discu ss the mechanism for the information and show that it is qualita tively different from spontaneous filamentation in homogeneous media.

Original languageEnglish (US)
Pages (from-to)38-39
Number of pages2
JournalElectronics Letters
Volume31
Issue number1
DOIs
StatePublished - Jan 5 1995

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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