Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Jun Jiao, Benedict Johnson, Supapan Seraphin, Maria J. Anc, Robert P. Dolan, Bernhard F. Cordts

Research output: Contribution to journalConference article

31 Scopus citations

Abstract

The microstructures of separation by implanted oxygen (SIMOX) wafers, implanted at 65 keV with doses of 1.5-7.0 × 1017 O+/cm2 at 500°C followed by a high temperature (1350°C) annealing with and without a protective cap, were studied using transmission electron microscopy to investigate the relationship between the formation of ultra-thin SIMOX structures and a variety of different preparation parameters. The study found that there is an optimum dose range corresponding to the implantation energy used. The samples synthesized at an oxygen dose of 2 × 1017 O+/cm2 (annealed without a cap) or 2.5 × 1017 O+/cm2 (annealed with a cap) consist of a thin silicon top layer with a low threading dislocation density, and a thin continuous buried oxide (BOX) layer free of Si islands. For samples implanted below the optimum dose, the BOX layer is discontinuous. Capping or non-capping the sample surface during annealing affects the formation of the BOX layer. For samples without a cap, internal thermal oxidation happens even in an ambient of low concentration of oxygen and makes the BOX layer grow continuously and free of Si islands.

Original languageEnglish (US)
Pages (from-to)150-155
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume72
Issue number2
DOIs
StatePublished - Mar 15 2000
EventThe International Conference on Advanced Materials 1999, Symposium M: Silicon-based Materials and Devices - Beijing, China
Duration: Jun 13 1999Jun 18 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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