Four-wave mixing and direct terahertz emission with two-color semiconductor lasers

S. Hoffmann, M. Hofmann, E. Bründermann, M. Havenith, M. Matus, J. V. Moloney, A. S. Moskalenko, M. Kira, S. W. Koch, S. Saito, K. Sakai

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77 Scopus citations

Abstract

The four-wave mixing in a semiconductor laser configured to emit on two wavelengths simultaneously was analyzed. It was shown that the four-wave mixing sidebands exist up to 4 THz stemming from a modulation of the carrier plasma at the difference frequency of the two laser modes. The tunable THz radiation at the difference frequency from the laser device itself suggesting a scheme for a tunable THz source was generated and detected. The results show that the corresponding difference frequency in the THz regime is emitted directly out of the laser diode.

Original languageEnglish (US)
Pages (from-to)3585-3587
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hoffmann, S., Hofmann, M., Bründermann, E., Havenith, M., Matus, M., Moloney, J. V., Moskalenko, A. S., Kira, M., Koch, S. W., Saito, S., & Sakai, K. (2004). Four-wave mixing and direct terahertz emission with two-color semiconductor lasers. Applied Physics Letters, 84(18), 3585-3587. https://doi.org/10.1063/1.1737486