Frequency-dependent dephasing in an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, G. Mohs, R. Binder, S. W. Koch, N. Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent theoretical calculations have shown a strong k dependence of the dephasing time across the gain region at the transparency point and in the absorption region of an inverted semiconductor. In the presence of a dense plasma, it is predicted that the dephasing rate approaches zero at the transparency point and increases in both the gain and absorption regions. We have obtained the first complete experimental verification of this phenomenon by using femtosecond-DFWM and spectral-hole-burning measurements in an optically excited semiconductor. In this study we prepared a low-temperature semiconductor in a state of optical gain and then measured the dephasing time at, below, and above the Fermi edge.

Original languageEnglish (US)
Title of host publicationProceedings of the International Quantum Electronics Conference (IQEC'94)
PublisherPubl by IEEE
Number of pages1
ISBN (Print)0780319737
StatePublished - Dec 1 1994
EventProceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA
Duration: May 8 1994May 13 1994

Publication series

NameProceedings of the International Quantum Electronics Conference (IQEC'94)

Other

OtherProceedings of the 21st International Quantum Electronics Conference (IQEC'94)
CityAnaheim, CA, USA
Period5/8/945/13/94

ASJC Scopus subject areas

  • Engineering(all)

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