Frictional and removal rate studies of silicon dioxide and silicon nitride CMP using novel cerium dioxide abrasive slurries

Yun Zhuang, Deanna King, Takanori Kido, Ara Philipossian

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Novel slurries containing cerium dioxide particles as the abrasives were used for silicon dioxide and silicon nitride CMP in this study. Real-time frictional force was measured during polishing. Slurries with varying ceria abrasive concentrations achieved different friction forces during the silicon dioxide and silicon nitride polishing. The effects of the ceria abrasive concentration on the silicon dioxide and silicon nitride removal rates were also investigated. The silicon dioxide removal rates exhibited non-Prestonian behavior, which was attributed to the additives used in the slurries. Being specially formulated for shallow trench isolation (STI) applications, these novel slurries achieved high oxide-to-nitride removal rate selectivities.

Original languageEnglish (US)
Pages (from-to)30-33
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number1 A
DOIs
StatePublished - Jan 1 2005

Keywords

  • Cerium dioxide (ceria) abrasives
  • Friction force
  • Lubrication mechanism
  • Removal rate
  • Silicon dioxide CMP
  • Silicon nitride CMP

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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