Frictional, thermal and kinetic characterization of a novel ceria based abrasive slurry for silicon dioxide CMP

Yun Zhuang, Leonard Borucki, Eric Dien, Mohamed Ennahali, George Michel, Bernard Laborie, Manish Keswani, Daniel Rosales-Yeomans, Hyosang Lee, Ara Philipossian

Research output: Contribution to conferencePaper

Abstract

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an ICI000 K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperatures increased from 26.4 to 38.4 °C with the increase in polishing power. The ILD removal rates also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rates deviated from Prestonian behavior at the highest ptimes; V polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rates. In this model, transient flash heating temperature was assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest p× V polishing condition and indicated that the polishing process was mechanical limited in the low p× V polishing region and became chemically and mechanically balanced with increasing polishing power.

Original languageEnglish (US)
Pages532-539
Number of pages8
StatePublished - Dec 1 2006
Event11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006 - Fremont, CA, United States
Duration: Feb 21 2006Feb 23 2006

Other

Other11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006
CountryUnited States
CityFremont, CA
Period2/21/062/23/06

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Zhuang, Y., Borucki, L., Dien, E., Ennahali, M., Michel, G., Laborie, B., Keswani, M., Rosales-Yeomans, D., Lee, H., & Philipossian, A. (2006). Frictional, thermal and kinetic characterization of a novel ceria based abrasive slurry for silicon dioxide CMP. 532-539. Paper presented at 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006, Fremont, CA, United States.