Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization

Ara Philipossian, Scott Olsen

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

In this work, real-time coefficient of friction (COF) analysis, in conjunction with a new method for approximating the Sommerfeld Number, is used to determine the extent of normal and shear forces during chemical mechanical planarization (CMP) and to help identify the tribology of the system. A new parameter termed the 'tribological mechanism indicator' is defined and extracted from the resulting Stribeck curves. The information on COF, 'tribological mechanism indicator' and inter-layer dielectric (ILD) removal rate results in a series of 'universal' correlations to help identify polishing conditions for optimized pad life and removal rate. Results further show that abrasive concentration, surface texture and pad grooving dramatically shift the tribology of the system from boundary lubrication to partial lubrication. Trends are explained using several models based on area of contact between wafer and abrasive particles, the extent of lubricity of the system and the compliance of the pad in micro- and macro-scales.

Original languageEnglish (US)
Pages (from-to)6371-6379
Number of pages9
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
StatePublished - Oct 2003

Fingerprint

Chemical mechanical polishing
Tribology
Abrasives
Lubrication
tribology
abrasives
Friction
Bearing pads
coefficient of friction
Polishing
grooving
boundary lubrication
Macros
Textures
lubrication
polishing
textures
wafers
shear
trends

Keywords

  • Chemical mechanical planarization (CMP)
  • Coefficient of friction (COF)
  • Removal rate
  • Tribological mechanism

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{dffcb9fc007e4f46a123bea474faa59d,
title = "Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization",
abstract = "In this work, real-time coefficient of friction (COF) analysis, in conjunction with a new method for approximating the Sommerfeld Number, is used to determine the extent of normal and shear forces during chemical mechanical planarization (CMP) and to help identify the tribology of the system. A new parameter termed the 'tribological mechanism indicator' is defined and extracted from the resulting Stribeck curves. The information on COF, 'tribological mechanism indicator' and inter-layer dielectric (ILD) removal rate results in a series of 'universal' correlations to help identify polishing conditions for optimized pad life and removal rate. Results further show that abrasive concentration, surface texture and pad grooving dramatically shift the tribology of the system from boundary lubrication to partial lubrication. Trends are explained using several models based on area of contact between wafer and abrasive particles, the extent of lubricity of the system and the compliance of the pad in micro- and macro-scales.",
keywords = "Chemical mechanical planarization (CMP), Coefficient of friction (COF), Removal rate, Tribological mechanism",
author = "Ara Philipossian and Scott Olsen",
year = "2003",
month = "10",
language = "English (US)",
volume = "42",
pages = "6371--6379",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10",

}

TY - JOUR

T1 - Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization

AU - Philipossian, Ara

AU - Olsen, Scott

PY - 2003/10

Y1 - 2003/10

N2 - In this work, real-time coefficient of friction (COF) analysis, in conjunction with a new method for approximating the Sommerfeld Number, is used to determine the extent of normal and shear forces during chemical mechanical planarization (CMP) and to help identify the tribology of the system. A new parameter termed the 'tribological mechanism indicator' is defined and extracted from the resulting Stribeck curves. The information on COF, 'tribological mechanism indicator' and inter-layer dielectric (ILD) removal rate results in a series of 'universal' correlations to help identify polishing conditions for optimized pad life and removal rate. Results further show that abrasive concentration, surface texture and pad grooving dramatically shift the tribology of the system from boundary lubrication to partial lubrication. Trends are explained using several models based on area of contact between wafer and abrasive particles, the extent of lubricity of the system and the compliance of the pad in micro- and macro-scales.

AB - In this work, real-time coefficient of friction (COF) analysis, in conjunction with a new method for approximating the Sommerfeld Number, is used to determine the extent of normal and shear forces during chemical mechanical planarization (CMP) and to help identify the tribology of the system. A new parameter termed the 'tribological mechanism indicator' is defined and extracted from the resulting Stribeck curves. The information on COF, 'tribological mechanism indicator' and inter-layer dielectric (ILD) removal rate results in a series of 'universal' correlations to help identify polishing conditions for optimized pad life and removal rate. Results further show that abrasive concentration, surface texture and pad grooving dramatically shift the tribology of the system from boundary lubrication to partial lubrication. Trends are explained using several models based on area of contact between wafer and abrasive particles, the extent of lubricity of the system and the compliance of the pad in micro- and macro-scales.

KW - Chemical mechanical planarization (CMP)

KW - Coefficient of friction (COF)

KW - Removal rate

KW - Tribological mechanism

UR - http://www.scopus.com/inward/record.url?scp=0346959661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346959661&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0346959661

VL - 42

SP - 6371

EP - 6379

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -