Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, Stephan W Koch, W. Rühle, S. R. Johnson, J. B. Wang, Y. H. Zhang

Research output: Contribution to journalArticle

Abstract

Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

Original languageEnglish (US)
Pages (from-to)411-414
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number2
DOIs
StatePublished - 2009
Externally publishedYes

Fingerprint

algae
photoluminescence
energy levels
transmission electron microscopy
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ga(AsSb)/GaAs/(AlGa)As heterostructures : Additional hole-confinement due to quantum islands. / Horst, S.; Chatterjee, S.; Hantke, K.; Klar, P. J.; Nemeth, I.; Stolz, W.; Volz, K.; Bückers, C.; Thränhardt, A.; Koch, Stephan W; Rühle, W.; Johnson, S. R.; Wang, J. B.; Zhang, Y. H.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. 2, 2009, p. 411-414.

Research output: Contribution to journalArticle

Horst, S, Chatterjee, S, Hantke, K, Klar, PJ, Nemeth, I, Stolz, W, Volz, K, Bückers, C, Thränhardt, A, Koch, SW, Rühle, W, Johnson, SR, Wang, JB & Zhang, YH 2009, 'Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 6, no. 2, pp. 411-414. https://doi.org/10.1002/pssc.200880338
Horst, S. ; Chatterjee, S. ; Hantke, K. ; Klar, P. J. ; Nemeth, I. ; Stolz, W. ; Volz, K. ; Bückers, C. ; Thränhardt, A. ; Koch, Stephan W ; Rühle, W. ; Johnson, S. R. ; Wang, J. B. ; Zhang, Y. H. / Ga(AsSb)/GaAs/(AlGa)As heterostructures : Additional hole-confinement due to quantum islands. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2009 ; Vol. 6, No. 2. pp. 411-414.
@article{ed2d3d9c6a3d47d6a6b31891dc05c472,
title = "Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands",
abstract = "Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30{\%}, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.",
author = "S. Horst and S. Chatterjee and K. Hantke and Klar, {P. J.} and I. Nemeth and W. Stolz and K. Volz and C. B{\"u}ckers and A. Thr{\"a}nhardt and Koch, {Stephan W} and W. R{\"u}hle and Johnson, {S. R.} and Wang, {J. B.} and Zhang, {Y. H.}",
year = "2009",
doi = "10.1002/pssc.200880338",
language = "English (US)",
volume = "6",
pages = "411--414",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Ga(AsSb)/GaAs/(AlGa)As heterostructures

T2 - Additional hole-confinement due to quantum islands

AU - Horst, S.

AU - Chatterjee, S.

AU - Hantke, K.

AU - Klar, P. J.

AU - Nemeth, I.

AU - Stolz, W.

AU - Volz, K.

AU - Bückers, C.

AU - Thränhardt, A.

AU - Koch, Stephan W

AU - Rühle, W.

AU - Johnson, S. R.

AU - Wang, J. B.

AU - Zhang, Y. H.

PY - 2009

Y1 - 2009

N2 - Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

AB - Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

UR - http://www.scopus.com/inward/record.url?scp=77952573961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952573961&partnerID=8YFLogxK

U2 - 10.1002/pssc.200880338

DO - 10.1002/pssc.200880338

M3 - Article

AN - SCOPUS:77952573961

VL - 6

SP - 411

EP - 414

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 2

ER -