Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300-1550 nm range

C. Schlichenmaier, A. Thränhardt, T. Meier, Stephan W Koch, W. W. Chow, Jorg Hader, Jerome V Moloney

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A microscopic model is used to analyze gain and loss properties of (GaIn) (NAs) GaAs quantum wells in the 1.3-1.55 μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000 cm-1.

Original languageEnglish (US)
Article number261109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2005


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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