Gain and luminescence modeling for high power laser applications

J. Hader, A. R. Zakharian, J. V. Moloney, T. R. Nelson, J. E. Ehret, S. W. Koch

Research output: Contribution to journalConference article

Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.

Original languageEnglish (US)
Pages (from-to)99-103
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4993
DOIs
StatePublished - Nov 20 2003
EventHigh-Power Fiber and Semiconductor Lasers - San Jose, CA, United States
Duration: Jan 27 2003Jan 27 2003

Keywords

  • Gain
  • Photo luminescence
  • Semiconductor laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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